I. Martin-Bragado: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

Ignacio Martin-Bragado, Ibrahim Avci, Nikolas Zographos, Martin Jaraiz, Pedro Castrillo

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 296 KB

english, 2008

2

Anisotropic dopant diffusion in Si under stress using both

I. Martin-Bragado, I. Avci, K. El Sayed, V. Koltyzhenkov, E. Lyumkis, M. D. Johnson

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 382 KB

english, 2008

3

A novel method for computing effective diffusivity: Application to helium implanted

Dunn, Aaron, Agudo-Merida, Laura, Martin-Bragado, Ignacio, McPhie, Mathieu, Cherkaoui, Mohammed, Capolungo, Laurent

Journal:

Journal of Nuclear Materials

Year:

2014

Language:

english

File:

PDF, 1.20 MB

english, 2014

4

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

Sklenard, Benoit, Batude, Perrine, Rafhay, Quentin, Martin-Bragado, Ignacio, Xu, Cuiqin, Previtali, Bernard, Colombeau, Benjamin, Khaja, Fareen-Adeni, Cristoloveanu, Sorin, Rivallin, Pierrette, Tavern

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.09 MB

english, 2013

5

MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

Martin-Bragado, Ignacio, Rivera, Antonio, Valles, Gonzalo, Gomez-Selles, Jose Luis, Caturla, María J.

Journal:

Computer Physics Communications

Year:

2013

Language:

english

File:

PDF, 572 KB

english, 2013

6

The influence of high grain boundary density on helium retention in tungsten

Valles, G., González, C., Martin-Bragado, I., Iglesias, R., Perlado, J.M., Rivera, A.

Journal:

Journal of Nuclear Materials

Year:

2015

Language:

english

File:

PDF, 552 KB

english, 2015

7

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Atomistic Modeling of Carbon Co-Implants and Rapid Thermal Anneals in Silicon

Zographos, Nikolas, Martin-Bragado, Ignacio

Year:

2007

Language:

english

File:

PDF, 1.05 MB

english, 2007

8

Mechanical behavior of nanoscale multilayers

Molina-Aldareguia, Jon M., Martín-Bragado, Ignacio, Llorca, Javier

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 119 KB

english, 2014

9

Modeling Evolution of Temperature, Stress, Defects, and Dopant Diffusion in Silicon During Spike and Millisecond Annealing

Moroz, Victor, Martin-Bragado, Ignacio, Zographos, Nikolas, Matveev, Dmitri, Zechner, Christoph, Choi, Munkang

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 3.44 MB

english, 2008

10

Retraction: “Atomistic simulation of damage accumulation and amorphization in Ge” [J. Appl. Phys. 117 , 055703 (2015)]

Gomez-Selles, Jose L., Claverie, Alain, Sklenard, Benoit, Benistant, Francis, Martin-Bragado, Ignacio

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 212 KB

english, 2017

11

Lattice kinetic Monte Carlo simulation of epitaxial growth of silicon thin films in H 2 /SiH 4 chemical vapor deposition systems

Balbuena, Juan Pablo, Martin-Bragado, Ignacio

Journal:

Thin Solid Films

Year:

2017

Language:

english

File:

PDF, 3.29 MB

english, 2017

12

Comprehensive, physically based modelling of As in Si

R. Pinacho, M. Jaraiz, P. Castrillo, J.E. Rubio, I. Martin-Bragado, J. Barbolla

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 119 KB

english, 2004

13

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

J.E. Rubio, M. Jaraiz, I. Martin-Bragado, R. Pinacho, P. Castrillo, J. Barbolla

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 140 KB

english, 2004

14

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

I. Martin-Bragado, M. Jaraiz, P. Castrillo, R. Pinacho, J.E. Rubio, J. Barbolla

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 93 KB

english, 2004

15

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

J.E. Rubio, M. Jaraiz, I. Martin-Bragado, P. Castrillo, R. Pinacho, J. Barbolla

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 279 KB

english, 2005

16

Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

Ignacio Martin-Bragado, S. Tian, M. Johnson, P. Castrillo, R. Pinacho, J. Rubio, M. Jaraiz

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 553 KB

english, 2006

17

Bimodal distribution of damage morphology generated by ion implantation

K.R.C. Mok, M. Jaraiz, I. Martin-Bragado, J.E. Rubio, P. Castrillo, R. Pinacho, M.P. Srinivasan, F. Benistant

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 205 KB

english, 2005

18

Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo

Ignacio Martin-Bragado, Nikolas Zographos

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 513 KB

english, 2011

19

Physical modeling of Fermi-level effects for decanano device process simulations

I. Martin-Bragado, R. Pinacho, P. Castrillo, M. Jaraiz, J.E. Rubio, J. Barbolla

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 145 KB

english, 2004

20

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

K.R.C. Mok, M. Jaraiz, I. Martin-Bragado, J.E. Rubio, P. Castrillo, R. Pinacho, M.P. Srinivasan, F. Benistant

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 188 KB

english, 2005

21

Comprehensive modeling of ion-implant amorphization in silicon

K.R.C. Mok, M. Jaraiz, I. Martin-Bragado, J.E. Rubio, P. Castrillo, R. Pinacho, M.P. Srinivasan, F. Benistant

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 126 KB

english, 2005

22

Physically based modeling of dislocation loops in ion implantation processing in silicon

P. Castrillo, I. Martin-Bragado, R. Pinacho, M. Jaraiz, J.E. Rubio, K.R.C. Mok, F.J. Miguel-Herrero, J. Barbolla

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 247 KB

english, 2005

23

Long and double hop kinetic Monte Carlo: Techniques to speed up atomistic modeling without losing accuracy

Ignacio Martin-Bragado, Nikolas Zographos, Martin Jaraiz

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 538 KB

english, 2008

24

Importance of twin defect formation created by solid-phase epitaxial growth: An atomistic study

Ignacio Martin-Bragado

Journal:

Scripta Materialia

Year:

2012

Language:

english

File:

PDF, 906 KB

english, 2012

25

An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth

Sklenard, Benoit, Barbe, Jean-Charles, Batude, Perrine, Rivallin, Pierrette, Tavernier, Clement, Cristoloveanu, Sorin, Martin-Bragado, Ignacio

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 656 KB

english, 2013

26

Lattice Kinetic Modeling of the Anisotropic Growth of Two-Dimensional Islands on Barite (001) Surface

de Antonio Gómez, Santiago, Pina, Carlos M., Martin-Bragado, Ignacio

Journal:

Crystal Growth & Design

Year:

2013

Language:

english

File:

PDF, 3.53 MB

english, 2013

27

Process modeling of stress and chemical effects in SiGe alloys using kinetic Monte Carlo

Nikolas Zographos, Ignacio Martin-Bragado

Journal:

Journal of Computational Electronics

Year:

2014

Language:

english

File:

PDF, 599 KB

english, 2014

28

Comprehensive modeling of solid phase epitaxial growth using Lattice Kinetic Monte Carlo

Martin-Bragado, Ignacio

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

29

Modeling of boron diffusion in silicon–germanium alloys using Kinetic Monte Carlo

Dopico, Ignacio, Castrillo, Pedro, Martin-Bragado, Ignacio

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 736 KB

english, 2014

30

Effect of ion flux on helium retention in helium-irradiated tungsten

Rivera, A., Valles, G., Caturla, M.J., Martin-Bragado, I.

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2013

Language:

english

File:

PDF, 287 KB

english, 2013

31

[IEEE 2014 14th International Workshop on Junction Technology (IWJT) - Shanghai, China (2014.5.18-2014.5.20)] 2014 International Workshop on Junction Technology (IWJT) - Low temperature junction formation by solid phase epitaxy on thin film devices: Atomistic modeling and experimental achievements

Sklenard, B., Batude, P., Pasini, L., Fenouillet-Beranger, C., Previtali, B., Casse, M., Brunet, L., Rivallin, P., Barbe, J-C., Tavernier, C., Cristoloveanu, S., Vinet, M., Martin-Bragado, I.

Year:

2014

Language:

english

File:

PDF, 607 KB

english, 2014

32

Multiscale modeling of defect formation during solid-phase epitaxy regrowth of silicon

Prieto-Depedro, M., Romero, I., Martin-Bragado, I.

Journal:

Acta Materialia

Year:

2015

Language:

english

File:

PDF, 2.50 MB

english, 2015

33

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)

Sklenard, B., Xu, C., Batude, P., Previtali, B., Tabone, C., Rafhay, Q., Colombeau, B., Khaja, F.-A., Martin-Bragado, I., Berthoz, J., Allain, F., Toffoli, A., Kies, R., Jaud, M.-A., Rivallin, P., Cri

Year:

2012

Language:

english

File:

PDF, 573 KB

english, 2012

34

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

Martin-Bragado, Ignacio, Avci, Ibrahim, Zographos, Nikolas, Castrillo, Pedro, Jaraiz, Martin

Year:

2007

Language:

english

File:

PDF, 115 KB

english, 2007

35

Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters

Martin-Bragado, Ignacio, Zographos, Nikolas, Castrillo, Pedro

Journal:

physica status solidi (a)

Year:

2014

Language:

english

File:

PDF, 286 KB

english, 2014

36

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Martin-Bragado, I., Jaraiz, M., Castrillo, P., Pinacho, R., Rubio, J. E., Barbolla, J.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 303 KB

english, 2004

37

Evolution of dislocation loops in iron under irradiation: The impact of carbon

Terentyev, D., Martin-Bragado, I.

Journal:

Scripta Materialia

Year:

2015

Language:

english

File:

PDF, 559 KB

english, 2015

38

Carbon in silicon: Modeling of diffusion and clustering mechanisms

Pinacho, R., Castrillo, P., Jaraiz, M., Martin-Bragado, I., Barbolla, J., Gossmann, H.-J., Gilmer, G.-H., Benton, J.-L.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 326 KB

english, 2002

39

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

Martin-Bragado, I., Castrillo, P., Jaraiz, M., Pinacho, R., Rubio, J. E., Barbolla, J.

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 145 KB

english, 2005

40

Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

J. E. Rubio, M. Jaraiz, I. Martin-bragado, J. M. Hernandez-mangas, J. Barbolla, G. H. Gilmer

Year:

2003

Language:

english

File:

PDF, 588 KB

english, 2003

41

{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

Martin-Bragado, Ignacio

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 693 KB

english, 2011

42

Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

Martin-Bragado, I., Jaraiz, M., Castrillo, P., Pinacho, R., Barbolla, J., De Souza, M. M.

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 116 KB

english, 2003

43

Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

Darby, B. L., Yates, B. R., Martin-Bragado, I., Gomez-Selles, J. L., Elliman, R. G., Jones, K. S.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.39 MB

english, 2013

44

Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology

Martin-Bragado, Ignacio, Sklenard, Benoit

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 2.85 MB

english, 2012

45

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Pinacho, R., Jaraiz, M., Castrillo, P., Martin-Bragado, I., Rubio, J. E., Barbolla, J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 249 KB

english, 2005

46

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

Martin-Bragado, Ignacio, Moroz, Victor

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

47

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

Martin-Bragado, I., Castrillo, P., Jaraiz, M., Pinacho, R., Rubio, J. E., Barbolla, J., Moroz, V.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 471 KB

english, 2005

48

Atomistic investigation of the impact of stress during solid phase epitaxial regrowth

Sklenard, Benoit, Barbe, Jean-Charles, Batude, Perrine, Rivallin, Pierrette, Tavernier, Clement, Cristoloveanu, Sorin, Martin-Bragado, Ignacio

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 151 KB

english, 2014

49

Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model

Martin-Bragado, Ignacio, Moroz, Victor

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 604 KB

english, 2009

50

Exploring doping options and variability of trigate transistors using atomistic process and device simulations

Martin-Bragado, Ignacio, Moroz, Victor, Choi, Munkang

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 631 KB

english, 2010